TW202485B - - Google Patents
Download PDFInfo
- Publication number
- TW202485B TW202485B TW080105276A TW80105276A TW202485B TW 202485 B TW202485 B TW 202485B TW 080105276 A TW080105276 A TW 080105276A TW 80105276 A TW80105276 A TW 80105276A TW 202485 B TW202485 B TW 202485B
- Authority
- TW
- Taiwan
- Prior art keywords
- shutter
- carburetor
- substrate
- chamber
- vaporizer
- Prior art date
Links
- 238000001451 molecular beam epitaxy Methods 0.000 claims description 32
- 239000006200 vaporizer Substances 0.000 claims description 32
- 238000011049 filling Methods 0.000 claims description 9
- 238000009434 installation Methods 0.000 claims description 5
- 238000007789 sealing Methods 0.000 claims description 2
- 238000000746 purification Methods 0.000 claims 1
- 239000000758 substrate Substances 0.000 description 86
- 238000002360 preparation method Methods 0.000 description 28
- 239000013078 crystal Substances 0.000 description 26
- 238000012546 transfer Methods 0.000 description 25
- 238000011068 loading method Methods 0.000 description 15
- 239000000463 material Substances 0.000 description 15
- 210000000078 claw Anatomy 0.000 description 10
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- 229910052785 arsenic Inorganic materials 0.000 description 6
- 239000012535 impurity Substances 0.000 description 6
- 238000010438 heat treatment Methods 0.000 description 5
- 230000033001 locomotion Effects 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 238000001816 cooling Methods 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 3
- 238000007872 degassing Methods 0.000 description 3
- 239000010408 film Substances 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 238000007639 printing Methods 0.000 description 3
- 210000003625 skull Anatomy 0.000 description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- 240000002853 Nelumbo nucifera Species 0.000 description 2
- 235000006508 Nelumbo nucifera Nutrition 0.000 description 2
- 235000006510 Nelumbo pentapetala Nutrition 0.000 description 2
- 238000009825 accumulation Methods 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 239000000356 contaminant Substances 0.000 description 2
- 238000009834 vaporization Methods 0.000 description 2
- 230000008016 vaporization Effects 0.000 description 2
- 239000011364 vaporized material Substances 0.000 description 2
- 229910001182 Mo alloy Inorganic materials 0.000 description 1
- 244000131316 Panax pseudoginseng Species 0.000 description 1
- 235000005035 Panax pseudoginseng ssp. pseudoginseng Nutrition 0.000 description 1
- 235000003140 Panax quinquefolius Nutrition 0.000 description 1
- 241000287107 Passer Species 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 239000002178 crystalline material Substances 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 210000002615 epidermis Anatomy 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 235000008434 ginseng Nutrition 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 238000004898 kneading Methods 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
- H01L21/67748—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber horizontal transfer of a single workpiece
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
- C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
- C23C14/566—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases using a load-lock chamber
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
- C30B23/02—Epitaxial-layer growth
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67126—Apparatus for sealing, encapsulating, glassing, decapsulating or the like
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
- H01L21/67751—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber vertical transfer of a single workpiece
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Metallurgy (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Mechanical Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Crystallography & Structural Chemistry (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1988042830U JPH0527501Y2 (en]) | 1988-03-30 | 1988-03-30 | |
| JP63077798A JPH01249692A (ja) | 1988-03-30 | 1988-03-30 | 分子線エピタキシー装置 |
| JP63087918A JPH01261296A (ja) | 1988-04-08 | 1988-04-08 | 分子線エピタキシー装置 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW202485B true TW202485B (en]) | 1993-03-21 |
Family
ID=27291358
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW080105276A TW202485B (en]) | 1988-03-30 | 1989-03-24 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US4944246A (en]) |
| EP (2) | EP0335267B1 (en]) |
| KR (2) | KR930010750B1 (en]) |
| CA (1) | CA1333038C (en]) |
| DE (2) | DE68916457T2 (en]) |
| TW (1) | TW202485B (en]) |
Families Citing this family (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2678775B1 (fr) * | 1991-07-05 | 1997-02-28 | Thomson Csf | Procede de realisation d'un dispositif optoelectronique |
| US5379719A (en) * | 1993-07-26 | 1995-01-10 | Sandia National Laboratories | Method of deposition by molecular beam epitaxy |
| GB9405442D0 (en) * | 1994-03-19 | 1994-05-04 | Applied Vision Ltd | Apparatus for coating substrates |
| GB0008286D0 (en) * | 2000-04-04 | 2000-05-24 | Applied Materials Inc | A vaporiser for generating feed gas for an arc chamber |
| US7622322B2 (en) * | 2001-03-23 | 2009-11-24 | Cornell Research Foundation, Inc. | Method of forming an AlN coated heterojunction field effect transistor |
| DE10261362B8 (de) * | 2002-12-30 | 2008-08-28 | Osram Opto Semiconductors Gmbh | Substrat-Halter |
| US7767480B1 (en) * | 2004-02-26 | 2010-08-03 | Opticomp Corporation | Method for semiconductor compositional grading to realize low-resistance, distributed Bragg reflectors |
| WO2008054240A1 (fr) * | 2006-10-31 | 2008-05-08 | 'nauchnoe I Tekhnologicheskoe Oborudovanie' Limited | Manipulateur de croissance pour chambre à vide destiné à la croissance d'hétérostructures semi-conductrices |
| DE212007000083U1 (de) | 2006-10-31 | 2009-07-16 | "Nauchnoe I Tekhnologicheskoe Oborudovanie" Limited | Züchtungsmanipulator |
| US20100285218A1 (en) * | 2008-12-18 | 2010-11-11 | Veeco Instruments Inc. | Linear Deposition Source |
| US20100159132A1 (en) * | 2008-12-18 | 2010-06-24 | Veeco Instruments, Inc. | Linear Deposition Source |
| US20100282167A1 (en) * | 2008-12-18 | 2010-11-11 | Veeco Instruments Inc. | Linear Deposition Source |
| US10026436B2 (en) * | 2009-07-01 | 2018-07-17 | Nordson Corporation | Apparatus and methods for supporting workpieces during plasma processing |
| DE102010016792A1 (de) | 2010-05-05 | 2011-11-10 | Aixtron Ag | Bevorratungsmagazin einer CVD-Anlage |
| JP5654807B2 (ja) * | 2010-09-07 | 2015-01-14 | 東京エレクトロン株式会社 | 基板搬送方法及び記憶媒体 |
| FR3025220B1 (fr) * | 2014-09-03 | 2016-09-09 | Riber | Dispositif sous vide pour le traitement ou l'analyse d'un echantillon |
| FR3025219B1 (fr) * | 2014-09-03 | 2016-12-02 | Riber | Dispositif sous vide pour le traitement ou l'analyse d'un echantillon |
| CN106637416B (zh) * | 2016-12-28 | 2018-11-20 | 厦门大学 | 矢量强磁场下分子束外延及其原位表征装置 |
| CN118180074B (zh) * | 2022-12-13 | 2025-08-12 | 武汉锐晶激光芯片技术有限公司 | 一种分子束外延设备生长室组件 |
Family Cites Families (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3839084A (en) * | 1972-11-29 | 1974-10-01 | Bell Telephone Labor Inc | Molecular beam epitaxy method for fabricating magnesium doped thin films of group iii(a)-v(a) compounds |
| US4171234A (en) * | 1976-07-20 | 1979-10-16 | Matsushita Electric Industrial Co., Ltd. | Method of fabricating three-dimensional epitaxial layers utilizing molecular beams of varied angles |
| GB2010335A (en) * | 1977-11-29 | 1979-06-27 | Dobson C | Improvements Relating to Vacuum Deposition Chamber |
| US4681773A (en) * | 1981-03-27 | 1987-07-21 | American Telephone And Telegraph Company At&T Bell Laboratories | Apparatus for simultaneous molecular beam deposition on a plurality of substrates |
| FR2502643B1 (fr) * | 1981-03-27 | 1986-05-02 | Western Electric Co | Appareil et procede de depot par jet moleculaire sur plusieurs substrats |
| US4592308A (en) * | 1983-11-10 | 1986-06-03 | Texas Instruments Incorporated | Solderless MBE system |
| US4605469A (en) * | 1983-11-10 | 1986-08-12 | Texas Instruments Incorporated | MBE system with in-situ mounting |
| JP2509170B2 (ja) * | 1983-11-10 | 1996-06-19 | テキサス インスツルメンツ インコーポレイテッド | 半導体ウェハ処理システム |
| US4569829A (en) * | 1983-11-10 | 1986-02-11 | Texas Instruments Incorporated | MBE Source bakeout system |
| JPS60108400A (ja) * | 1983-11-15 | 1985-06-13 | Toshiba Corp | 分子線結晶成長装置 |
| JPS61107720A (ja) * | 1984-10-31 | 1986-05-26 | Hitachi Ltd | 分子線エピタキシ装置 |
| US4636268A (en) * | 1984-11-30 | 1987-01-13 | At&T Bell Laboratories | Chemical beam deposition method utilizing alkyl compounds in a carrier gas |
| JPS61280610A (ja) * | 1985-06-06 | 1986-12-11 | Toshiba Corp | 分子線エピタキシヤル成長装置 |
| JPS6235513A (ja) * | 1985-08-09 | 1987-02-16 | Hitachi Ltd | 分子線エピタキシ装置 |
| JPS6261315A (ja) * | 1985-09-11 | 1987-03-18 | Sharp Corp | 分子線エピタキシ−装置 |
-
1989
- 1989-03-23 EP EP89105248A patent/EP0335267B1/en not_active Expired - Lifetime
- 1989-03-23 EP EP92117113A patent/EP0529687B1/en not_active Expired - Lifetime
- 1989-03-23 DE DE68916457T patent/DE68916457T2/de not_active Expired - Fee Related
- 1989-03-23 DE DE68926577T patent/DE68926577T2/de not_active Expired - Fee Related
- 1989-03-24 TW TW080105276A patent/TW202485B/zh active
- 1989-03-27 US US07/329,313 patent/US4944246A/en not_active Expired - Lifetime
- 1989-03-29 CA CA000594977A patent/CA1333038C/en not_active Expired - Fee Related
- 1989-03-30 KR KR1019890004152A patent/KR930010750B1/ko not_active Expired - Fee Related
-
1993
- 1993-07-09 KR KR1019930013044A patent/KR930010751B1/ko not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| DE68926577D1 (de) | 1996-07-04 |
| KR890016632A (ko) | 1989-11-29 |
| US4944246A (en) | 1990-07-31 |
| KR930010750B1 (ko) | 1993-11-10 |
| EP0335267A2 (en) | 1989-10-04 |
| DE68916457T2 (de) | 1995-02-09 |
| EP0529687B1 (en) | 1996-05-29 |
| KR930010751B1 (ko) | 1993-11-10 |
| DE68916457D1 (de) | 1994-08-04 |
| EP0335267A3 (en) | 1990-10-31 |
| DE68926577T2 (de) | 1996-10-02 |
| CA1333038C (en) | 1994-11-15 |
| EP0335267B1 (en) | 1994-06-29 |
| EP0529687A2 (en) | 1993-03-03 |
| EP0529687A3 (en) | 1993-03-24 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TW202485B (en]) | ||
| US5705044A (en) | Modular sputtering machine having batch processing and serial thin film sputtering | |
| JP3078620U (ja) | 薄膜を成長させるための装置 | |
| EP0271351B1 (en) | Vacuum evaporating apparatus | |
| JP2022541573A (ja) | 基板上にフィルムを形成するための蒸発器チャンバ | |
| JPH08239765A (ja) | マルチチャンバースパッタリング装置 | |
| JP4227220B2 (ja) | インライン式蒸着装置における蒸着室への蒸発源の連続送り込み方法 | |
| JPH0688233A (ja) | 真空蒸着装置 | |
| JP2020063476A (ja) | 蒸着装置 | |
| CA1333039C (en) | Molecular beam epitaxy apparatus | |
| KR20170056326A (ko) | 진공증착기용 매니퓰레이터 | |
| CN113493899A (zh) | 腔室分离型外膜生长装置 | |
| JP2003115379A (ja) | 有機ｅｌ素子製造装置 | |
| JP5419420B2 (ja) | 成膜方法および成膜装置、ならびに記憶媒体 | |
| KR100585913B1 (ko) | 광학소자 박막 코팅용 증발물질 용해장치 및 용해방법 | |
| JP4714920B2 (ja) | 蒸着材料供給装置および方法 | |
| JPH0680496A (ja) | 低温用クヌ−ドセンセル | |
| JP3975508B2 (ja) | 液体材料気化装置 | |
| JPS6272113A (ja) | 分子線結晶成長装置 | |
| JPH0516399B2 (en]) | ||
| JPH0995775A (ja) | 連続真空蒸着装置のるつぼ機構 | |
| JPH08378Y2 (ja) | 分子線エピタキシャル装置 | |
| JPH02274877A (ja) | 気相成長装置 | |
| JPH01261296A (ja) | 分子線エピタキシー装置 | |
| JPH0578191A (ja) | 分子線エピタキシ装置 |